isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK290P65Y
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.
29Ω ·Enhancement mode:
Vth = 3 to 4V (VDS = 10 V, ID=0.
45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
11.
5
A
IDM
Drain Current-Single Pulsed
46
A
PD
Total Dissipation @TC=25℃
100
W
Tj
Max.
Operating Junction Temperature 150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS...