| Part Number | IXTC240N055T |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor IXTC240N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanch... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MA... |
| File Size | 248.07KB |
| Datasheet |
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IXTC240N055T : Preliminary Technical Information TrenchMVTM IXTC240N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 132 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient 55 55 ± 20 V V V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 132 A 75 A 650 A 25 A 500 mJ IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 3 V/ns 150 -55 ... +175 175 -55 ... +175 W °C °C °C 1.6 mm (0.062 in.) from case for 10 s Plasti.