isc N-Channel MOSFET
Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 24mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION ·Designed for use in switch mode power supplies and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max.
Operating Junction Temperature
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c
PARAMETER Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC...