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Part Number
|
IXTH420N04T2 |
|
Manufacturer
|
IXYS |
|
Description
|
Power MOSFET |
|
Published
|
Nov 13, 2020 |
|
Detailed Description
|
Advance Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
...
|
|
Datasheet
|
IXTH420N04T2
|
Overview
Advance Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTH420N04T2
VDSS = ID25 =
RDS(on) ≤
40V 420A 2.
0mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg TL Tsold
M d
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque
Maximum Ratings
40
V
40
V
± 20
V
420
A
160
A
1050
A
200
A
960
mJ
935
W
-55 .
.
.
+175
°C
175
°C
-55 .
.
.
+175
°C
300
°C
260
°C
1.
13 / 10
Nm/lb.
...
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