isc N-Channel MOSFET
Transistor
IXTP4N70X2M
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 850mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
700
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4
IDM
Drain Current-Single Pulsed
8
PD
Total Dissipation @TC=25℃
30
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERIS...