isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS(on) ≤ 300mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Plused
24
A
PD
Total Dissipation @TC=25℃
180
W
Tj
Max.
Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·...