Schottky Barrier Rectifier
MBR20150CD
FEATURES ·Multilayer Metal -Silicon Potential Structure.
·Low Leakage Current.
·High Current Capability, High Efficiency.
·High Junction Temperature Capability.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS ·For use in low voltage,high frequency inverters,
free wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM IF(AV) IFSM
TJ Tstg
Peak Repetitive Reverse Voltage
Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.
3ms single half sine-wave superimposed on rated load conditions Junction Temperature Storage Temperature Range
VALUE...