Power
Schottky Rectifier
INCHANGE Semiconductor
STPS20120CT
FEATURES ·Low Power Loss,high Efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
120
V
IF(RMS) RMS Forward current
30
A
IF(AV)
Average Forward Current
per diode per device
10 20
A
IFSM
Nonrepetitive Peak Surge Current tp=10 ms sinusoidal
150
A
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65...