| Part Number | IXTP52P10P |
| Manufacturer | INCHANGE |
| Title | P-Channel MOSFET |
| Description | isc P-Channel MOSFET Transistor IXTP52P10P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot... |
| Features |
·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE ... |
| File Size | 245.25KB |
| Datasheet |
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IXTP52P10P : PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P TO-263 AA (IXTA) TO-220AB (IXTP) D G S D (Tab) GD S D (Tab) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings -100 V -100 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 52 A -130 A - 52 A 1.5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 300 -55 ... +150 150 -55 ... +150 V/ns W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Torque .