isc N-Channel MOSFET
Transistor
IXTP200N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.
0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
85
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
200
IDM
Drain Current-Single Pulsed
540
PD
Total Dissipation @TC=25℃
480
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERIS...