Part Number
|
IXTA86N20T |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Nov 19, 2020 |
Detailed Description
|
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalance Rated
IXTA86N20T IXTP86N20T IXTQ86N20T
Symbol
VDSS VDGR V...
|
Datasheet
|
IXTA86N20T
|
Overview
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalance Rated
IXTA86N20T IXTP86N20T IXTQ86N20T
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient
Maximum Ratings
200
V
200
V
20
V
30
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C
86 260
10 1
550 3
-55 .
.
.
+175 175
-55 .
.
.
+175
A A
A J
W
V/ns C C C
Maximum Lead Temperature for Soldering
300
°C
1.
6 mm (0.
062in.
) from Case for 10s
260
°C
Mounting Force (TO-263)
10.
.
65 / 2.
2.
.
14.
6
Mounting Torque (TO-220 & TO-3P)
1.
13 / 10
N/lb...
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