isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXTV22N50P
·FEATURES ·With TO-220F packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS Drain-Source Voltage
500
VGSS Gate-Source Voltage
±30
ID
Drain Current-Continuous
22
IDM
Drain Current-Single Pulsed
66
PD
Total Dissipation
350
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case therma...