DatasheetsPDF.com

IXTU05N100

Part Number IXTU05N100
Manufacturer IXYS
Description Power MOSFET
Published Nov 23, 2020
Detailed Description High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 =  RDS(on) 10...
Datasheet IXTU05N100





Overview
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 =  RDS(on) 1000V 750mA 17 TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 30 V 40 V 750 mA 3 A 1 A 100 mJ 3 V/ns 40 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 ...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)