isc N-Channel MOSFET
Transistor
IXTY2N80P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
2
A
IDM
Drain Current-Single Pulsed
4
A
PD
Total Dissipation @TC=25℃
70
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperatur...