isc N-Channel MOSFET
Transistor
IXTY3N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.
9Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
3
A
IDM
Drain Current-Single Pulsed
6
A
PD
Total Dissipation @TC=25℃
70
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~1...