Isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11.
6
PD
Total Dissipation @TC=25℃
125
Tj
Max.
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A W ℃ ℃
SPB12N50C3
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-...