isc N-Channel MOSFET
Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤45mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Provides the designer with an extremely efficient and reliable
device for use in battery and load management.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous@TA=25℃
IDM
Drain Current-Single Pulsed
PD
Total Dissipation @TA=25℃
Tj
Max.
Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-a) Channel-to-ambient therm...