Isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-ContinuousTc=25℃
80
A
IDM
Drain Current-Single Pulsed
320
A
PD
Total Dissipation @TC=25℃
134
W
Tch
Max.
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-case Thermal r...