| Part Number | STF28NM60ND |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drai... |
| Features |
·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 150mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Swi... |
| File Size | 261.98KB |
| Datasheet |
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STF28NM60ND : These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB28NM60ND STF28NM60ND STP28NM60ND STW28NM60ND Table 1. Device summary Marking Packages 2 D PAK 28NM60ND TO-220FP TO-220 TO-247 Packaging Tape and reel Tube May 2014 This is information on a product in full production. DocID024520 Rev 3 1/22 www.st.com 22 Contents Contents STB28NM60ND, STF28NM.