| Part Number | STF80N10F7 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF80N10F7 \ ·FEATURES ·Extremely low gate charge ·Ultra low on-resistance ·Low gate inpu... |
| Features |
·Extremely low gate charge ·Ultra low on-resistance ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS D... |
| File Size | 233.78KB |
| Datasheet |
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STF80N10F7 : th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72DQG 72)3 QR7$% +3$. $0Y Order codes STD80N10F7 STF80N10F7 STH80N10F7-2 STP80N10F7 Table 1. Device summary Marking Package 80N10F7 DPAK TO-220FP 2 H PAK-2 TO-220 Packaging Tape and reel Tube Tape and reel Tube February 2014 This is information on a product in full production. DocID025865 Rev 1 1/25 www.st.com Contents Contents STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..