isc N-Channel MOSFET
Transistor
STP9NM60N
FEATURES ·Drain Current –ID= 6.
5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
745Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
6.
5
A
IDM
Drain Current-Single Pluse
26
A
PD
Total Dissipation @TC=25℃
70
W
TJ
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERIST...