isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.
9mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max.
Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
80
V
±20
V
120
A
480
A
250
W
-55~17...