Isc N-Channel MOSFET
Transistor
STU10NM60N
·FEATURES ·With TO-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current-Continuous@TC=25℃ TC=125℃
10 5
A
IDM
Drain Current-Single Pulsed
32
A
PD
Total Dissipation @TC=25℃
70
W
Tch
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R...