isc N-Channel Mosfet
Transistor
·FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
14
A
IDM
Pulse Drain Current
56
A
Ptot
Total Dissipation@TC=25℃
110
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Therma...