isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 148mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
22
A
IDM
Drain Current-Single Pluse
88
A
PD
Total Dissipation @TC=25℃
150
W
TJ
Max.
Operating Junction Temperature 150
℃
Tstg
Storage Temperature
...