STB20NK50Z N-channel 500 V, 0.
23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected in D²PAK package Datasheet — obsolete product Features Type VDSS RDS(on) max ID PW STB20NK50Z 500 V 0.
27 Ω 17 A 190 W ct(s) ■ Extremely high dv/dt capability du ■ 100% avalanche tested ro ■ Gate charge minimized P ■ Very low intrinsic capacitances te ■ Very good manufacturing repeatability sole Application Ob ■ Switching applications t(s) - Description c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout.
In te addition to a significant reduction...

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