STB180N55F3 STP180N55F3
N-channel 55V - 3.
2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET
Features
Type
VDSS RDS(on)
ID
Pw
STB180N55F3 55V
) STP180N55F3 55V
3.
5mΩ 120A(1) 330W 3.
8mΩ 120A(1) 330W
t(s 1.
Value limited by wire bonding
uc ■ Ultra low on-resistance d ■ 100% avalanche tested
Pro Description lete This n-channel enhancement mode Power
MOSFET is the latest refinement of
so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility.
The resulting
transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low gat...