MOSFETs Silicon N-Channel MOS (DTMOS)
TK12P50W
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.
265 Ω (typ.
) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
6 mA)
3.
Packaging and Internal Circuit
TK12P50W
1: Gate 2: Drain (Heatsink) 3: Source
DPAK
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
11.
5
A
Drain current (pulsed)
(Note 1)
IDP
46.
0
Power dissipation
(Tc = 25...