isc N-Channel MOSFET
Transistor
TK25N60X5
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.
14Ω.
·Enhancement mode:
Vth =3.
0 to 4.
5V (VDS = 10 V, ID=1.
2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
25
A
IDM
Drain Current-Single Pulsed
100
A
PD
Total Dissipation @TC=25℃
180
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
...