isc N-Channel MOSFET
Transistor
AOT42S60
·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 109mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
37
A
IDM
Drain Current-Single Pulsed
166
A
PD
Total Dissipation @TC=25℃
417
W
Tj
Max.
Operating Junction Temperature -55~150 ℃
Ts...