AOT412

AOT410L : isc N-Channel MOSFET Transistor AOT410L ·FEATURES ·Drain Current –ID= 150A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Drain Current-Continuous 150 A IDM Drain Current-Single Pulsed 405 A PD Total Dissipation @TC=25℃ 333 W Tj Max. Operating Junction Temperature -55~175 ℃ T.

AOT410L : The AOT410L/AOB410L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS= 7V) 100% UIS Tested 100% Rg Tested 100V 150A 6.5mW ( 6.2mW*) 7.5mW ( 7.2mW*) Top View TO-220 Bottom View Top View TO-263 D2PAK Bottom View D D D D D AOT410L S GD Orderable Part Number AOT410L AOB410L SDG Package Type TO-220 TO-263 S G AOB410L Form Tube Tape & Reel G G S S Minimum Order Quantity 10.

AOT412 : The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 60A 15.8mΩ 19.4mΩ Top View D TO220 Bottom View D Top View TO-263 D2PAK Bottom View D D G DS AOT412 S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current .

AOT414 : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 43 31 100 PD Total Dissipation 115 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth.

AOT414 : Product Summary The AOT414 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.AOT414 and AOT414L are electrically identical. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 43A 25mΩ 31mΩ TO220 Top View Bottom View D D S G G GD SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pul.

AOT416 : isc N-Channel MOSFET Transistor AOT416 ·FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Drain Current-Continuous 42 A IDM Drain Current-Single Pulsed 110 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg .

AOT418L : isc N-Channel MOSFET Transistor AOT418L ·FEATURES ·Drain Current –ID= 105A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Drain Current-Continuous 105 A IDM Drain Current-Single Pulsed 280 A PD Total Dissipation @TC=25℃ 333 W Tj Max. Operating Junction Temperature -55~175 ℃ Ts.

AOT418L : Product Summary The AOT418L/AOB418L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 105A 10mΩ 12mΩ Top View TO220 Bottom View D D Top View TO-263 D2PAK Bottom View D D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=1.