sc N-Channel MOSFET
Transistor
AOTF2606L
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
54
A
IDM
Drain Current-Single Pulsed
260
A
PD
Total Dissipation @TC=25℃
36.
5
W
Tj
Max.
Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
·THER...