| Part Number | MBRF30H100CTG |
| Manufacturer | ON Semiconductor |
| Title | Switch-mode Power Rectifier |
| Description | Switch-mode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG Features and Benefits Low Forward Voltage: 0.67 V @ 125C Low Power Loss/H... |
| Features |
and Benefits
Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications Power Supply − Output Rectification Power Management Instrumentation Mecha... |
| File Size | 331.36KB |
| Datasheet |
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MBRF30H100CT : Schottky Barrier Rectifier INCHANGE Semiconductor MBRF30H100CT FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current 100 V 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimpos.
MBRF30H100CT : MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB MBR30H100CT PIN 1 PIN 2 3 2 1 123 MBRF30H100CT PIN 1 PIN 2 PIN 3 CASE PIN 3 D2PAK (TO-263AB) K 2 1 MBRB30H100CT PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. Package 2 x 15 A 100 V 275 A 0.67 V 5.0 μA 175 °C TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configuration Dual common cathode FEATURES • Power pack • Guardring for overvoltage protection • .
MBRF30H100CT : Switch‐mode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • These are Pb−Free Devices Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • ESD Rating: Human Body Model = 3B Machine .