IPA045N10N3G
MOSFET
OptiMOSTM3Power-
Transistor,100V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
4.
5
mΩ
ID
64
A
TO-220-FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Type/OrderingCode IPA045N10N3 G
Package PG-TO220-FP
Marking 045N10N
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
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