iscN-Channel MOSFET
Transistor
IRFBG20
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 11Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1000
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
1.
4
A
IDM
Drain Current-Single Pulsed
5.
6
A
PD
Total Dissipation @TC=25℃
54
W
Tj
Max.
Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMET...