iscN-Channel MOSFET
Transistor
IRFPC60LC
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤0.
4Ω @VGS=10V ·Enhancement mode:
Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
16
A
IDM
Drain Current-Single Pulsed
64
A
PD
Total Dissipation @TC=25℃
280
W
Tj
Max.
Operating Junction Temperature -55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
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