RJP30H1

RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) ...