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Part Number
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USG170N03 |
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Manufacturer
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UTC |
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Description
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N-CHANNEL MOSFET |
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Published
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Dec 21, 2020 |
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Detailed Description
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UNISONIC TECHNOLOGIES CO., LTD
USG170N03
Preliminary
85A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET
DESCR...
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Datasheet
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USG170N03
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Overview
UNISONIC TECHNOLOGIES CO.
, LTD
USG170N03
Preliminary
85A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET
DESCRIPTION
The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
The UTC USG170N03 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
FEATURES
* RDS(ON) ≤ 2.
64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.
1 mΩ @ VGS=4.
5V, ID=25A
* Optimized for high speed switching, Logic level * Enhanced Body diode dv/dt capability * Enhanced Avalanche Ruggednessy
SYMBOL
Drain (5, 6, 7, 8)
POWER MOSFET
1 DFN5060-8
...
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