Part Number
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NPA1007 |
Manufacturer
|
MA-COM |
Description
|
GaN on Silicon Power Amplifier |
Published
|
Dec 22, 2020 |
Detailed Description
|
NPA1007
GaN on Silicon Power Amplifier 20 - 2500 MHz, 28 V, 10 W
Features
GaN on Si HEMT D-Mode Amplifier Suitable f...
|
Datasheet
|
NPA1007
|
Overview
NPA1007
GaN on Silicon Power Amplifier 20 - 2500 MHz, 28 V, 10 W
Features
GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Broadband Operation from 20 - 2500 MHz 28 V Operation 12.
5 dB Gain @ 2500 MHz 43% Drain Efficiency @ 2500 MHz 100% RF Tested Fully Matched at Input, Unmatched at Output Lead-Free 6 x 5 mm 8-lead PDFN Package Halogen-Free “Green” Mold Compound RoHS* Compliant
Description
The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation.
This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.
The NPA1007 is a general pur...
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