Part Number
|
12M1H060 |
Manufacturer
|
Infineon |
Description
|
1200V SiC Trench MOSFET |
Published
|
Dec 31, 2020 |
Detailed Description
|
IMZ120R060M1H
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching loss...
|
Datasheet
|
12M1H060
|
Overview
IMZ120R060M1H
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
Very low switching losses Threshold-free on state characteristic Benchmark gate threshold voltage, VGS(th) = 4.
5V 0V turn-off gate voltage for easy and simple gate drive Fully controllable dV/dt Robust body diode for hard commutation Temperature independent turn-off switching losses Sense pin for optimized switching performance
Gate pin 4
Sense pin 3
Drain pin 1
Source pin 2
Benefits
Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost
Potential applications
Energy generation o Solar...
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