4N60TF 4 Amps,600 Volts N-CHANNEL Power MOSFET FEATURE  4A,600V,RDS(ON)MAX=2.
5Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability  Halogen free TO-220TF Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw Parameter Thermal resistance , Channel to ...

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