| Part Number | 70N03G |
| Manufacturer | PINGWEI |
| Title | N-Channel MOSFET |
| Description | 70N03G 70 Amps,30 Volts N-CHANNEL MOSFET Featutes 70A,30V,RDS(ON)MAX=6.5mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av... |
| Features |
oltage
BVDSS VGS=0V,ID=250uA
30
Breakdown Temperature Coefficient
ΔBVDSS /ΔTJ
Reference to 25℃ ， －
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
－
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
－
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
－
On Ch...
|
| File Size | 486.01KB |
| Datasheet |
|
70N03 : GFB70N03 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D VDS 30V RDS(ON) 8mΩ ID 70A D ® G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) www.DataSheet4U.com 0.360 (9.14) G PIN D S 0.575 (14.60) 0.625 (15.88) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.63 (17.02) 0.33 (8.38) Seating Plate -T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.120 (3.05) 0.155 (3.94) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mounting Pad Layout Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable .
70N03 : The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS (V) 30 RDS(ON) (mΩ) 9 ID (A) 60 Pin Assignments Pin Descriptions (Front View) 3S 2D 1G Pin Name S G D Description Source Gate Drain Ordering information A X 70N03 X X Feature PN Package F :MOSFET D: TO-252 Block Diagram Packing Blank : Tube or Bulk A : Tape & Reel DS G This datasheet contains new product information. Anachip Corp. reserves.
70N03 : The 70N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The 70N03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% avalanche tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 7m ID 70A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch TO252 / TO251 Pin Configuration D.
70N03 : 70N03 N-Channel MOSFET TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +1.50 0.15 -0.15 3.80 +5.55 0.15 -0.15 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.252 .6 5 -0.1 1 Gate 2 Drain 3 Source G D S ■ Features ● VDS (V) = 30V ● ID = 33A (VGS = 10V) ● RDS(ON) ＜ 4.3mΩ (VGS = 10V) ● RDS(ON) ＜ 6.5mΩ (VGS = 4.5V) T +9.70 0.2 -0.2 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Tempera.
70N03 : TO-251 N MOS 。N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ，，。 Super high dense cell design for low RDS(on), Rugged and reliable,surface. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 1 2 3 PIN1：G PIN 2：D PIN 3：S / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BRI70N03 Rev.D Nov.-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Voltage Drain Current Drain Current －Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Power Dissipation (TA=25℃) Junction and.