isc Silicon
NPN Power
Transistor
2SC1060
DESCRIPTION ·With TO-220 package ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.
0V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·DC-DC convertor ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
3
A
25
W
150
℃
Tstg
Storage Temperature
-55~...