HM20N60A
General Description：
VDSS
600
HM20N60A, the silicon N-channel Enhanced
ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
250
RDS(ON)Typ
0.
36
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy.
The
transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-3P(N), which accords with the RoHS standard.
.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.
45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit ...