isc N-Channel MOSFET
Transistor
AOI4T60
FEATURES ·Drain Current –ID= 4.
0A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =2.
1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
4.
0
A
IDM
Drain Current-Single Pluse
16
A
PD
Total Dissipation @TC=25℃
83
W
TJ
Max.
Operating Junction Temperature -55~150 ℃
Tstg...