| Part Number | R6006KNX |
| Manufacturer | ROHM |
| Title | Power MOSFET |
| Description | R6006KNX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.83Ω ID ±6A TO-220FM PD 40W lFeatures... |
| Features |
1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C...
|
| File Size | 2.01MB |
| Datasheet |
|
R6006KND3 : R6006KND3 Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 830mΩ ±6A 70W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-252 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6006K Basic ordering unit (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 V ±6 A ±18 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Av.
R6006KND3 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 70 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.8 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6006KND3 ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.
R6006KNX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.13 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6006KNX ELECTRICAL CHARACTERISTICS TC=25℃ unless other.