| Part Number | R6007JND3 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT... |
| Features |
·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 780mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and ... |
| File Size | 261.40KB |
| Datasheet |
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R6007JND3 : R6007JND3 Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6007JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±3.