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MJE4353


Part Number MJE4353
Manufacturer ON Semiconductor
Title PNP Transistor
Description MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high vol...
Features
• High Collector−Emitter Sustaining Voltage − NPN PNP VCEO(sus) = 160 Vdc − MJE4343 MJE4353
• High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ)
• Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
• These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Max C...

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MJE4350 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 ·Low Saturation Voltage ·Complement to the NPN MJE4340/4341/4342/4343 APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE MJE4350 -100 VCBO Collector-Base Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 MJE4350 -100 VCEO Collector-Emitter Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Continuous .

MJE4350 : ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4350/4351/4352/4353 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE4350 VCBO Collector-base voltage MJE4351 MJE4352 MJE4353 MJE4350 VCEO Collector-emitter voltage MJE4351 MJE4352 MJE4353 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage t.

MJE4351 : ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4350/4351/4352/4353 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE4350 VCBO Collector-base voltage MJE4351 MJE4352 MJE4353 MJE4350 VCEO Collector-emitter voltage MJE4351 MJE4352 MJE4353 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage t.

MJE4351 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 ·Low Saturation Voltage ·Complement to the NPN MJE4340/4341/4342/4343 APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE MJE4350 -100 VCBO Collector-Base Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 MJE4350 -100 VCEO Collector-Emitter Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Continuous .

MJE4352 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE4342/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage — NPN PNP VCEO(sus) = 140 Vdc — MJE4342 MJE4352 VCEO(sus) = 160 Vdc — MJE4343 MJE4353 • High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc MAXIMUM RATINGS MJE4342 MJE4343 MJE4352 MJE4353 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 – 160 VOLTS NPN PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ.

MJE4352 : ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4350/4351/4352/4353 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE4350 VCBO Collector-base voltage MJE4351 MJE4352 MJE4353 MJE4350 VCEO Collector-emitter voltage MJE4351 MJE4352 MJE4353 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage t.

MJE4352 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 ·Low Saturation Voltage ·Complement to the NPN MJE4340/4341/4342/4343 APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE MJE4350 -100 VCBO Collector-Base Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 MJE4350 -100 VCEO Collector-Emitter Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Continuous .

MJE4353 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= -8 A : hFE = 8 (Min) @IC= -16A ·Complement to Type MJE4343 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 125 W -65~150 ℃ Tstg Storage Temperature -65~1.

MJE4353 : The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

MJE4353 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE4342/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage — NPN PNP VCEO(sus) = 140 Vdc — MJE4342 MJE4352 VCEO(sus) = 160 Vdc — MJE4343 MJE4353 • High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc MAXIMUM RATINGS MJE4342 MJE4343 MJE4352 MJE4353 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 – 160 VOLTS NPN PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ.

MJE4353 : ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4350/4351/4352/4353 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE4350 VCBO Collector-base voltage MJE4351 MJE4352 MJE4353 MJE4350 VCEO Collector-emitter voltage MJE4351 MJE4352 MJE4353 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage t.




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