APT30N60BC6 APT30N60SC6 600V 30A .
125Ω COOLMOS Power Semiconductors • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated Super Junction MOSFET TO-247 D3PAK D G S MAXIMUM RATINGS Symbol Parameter All Ratings per die: TC = 25°C unless otherwise specified.
APT30N60B_SC6 UNIT VDSS ID IDM VGS PD TJ,TSTG TL dv/dt IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Total Power Dissipation @ TC = 25°C Gate-Source Voltage Continuous Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Drain-Source Voltag...

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