Transistors
2SC4626J
Silicon
NPN epitaxial planar type
0.
80±0.
05
For high-frequency amplification
1.
60+–00.
.
0035 1.
00±0.
05
Unit: mm
0.
12+–00.
.
0013
■ Features
3
(0.
375)
0.
85–+00.
.
0035 1.
60±0.
05 5˚
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
12
(0.
80)
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.
27±0.
02 (0.
50)(0.
50)
■ Absolute Maximum Ratings Ta = 25°C
5˚
/ Parameter
Symbol Rating
Unit
0 to 0.
02 0.
70–+00.
.
0035
e Collector-base voltage (Emitter open) VCBO
30
V
0.
10 max.
pe) Collector-emitter voltage (Base open) VCEO
20
V
nc d ge.
ed ty Emitter-base voltage (Collector ...